9N90L PDF Datasheet

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 9N90L ·DESCRIPTION ·Drain Current ID= 9A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Fast Switching Speed ·APPLICATIONS ·General purpose power amplifier ·ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) VGS Gate-Source Voltag

FMH09N90E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.0±0.5V) High avalanche

UNISONIC TECHNOLOGIES CO., LTD 9N90 900V N-CHANNEL MOSFET „ DESCRIPTION 1 Power MOSFET The UTC 9N90 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for

UNISONIC TECHNOLOGIES CO., LTD 9N90-Q 9A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 9N90-Q uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for u

AOK9N90 900V,9A N-Channel MOSFET General Description The AOK9N90 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with gua

AP09N90CW Advanced Power Electronics Corp. ▼ Minimize On-resistance ▼ Fast Switching ▼ Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 900V 1.4Ω 7.6A G S Description AP09N90C provides minimize on-state resistance , superior switch