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82C18 データシート PDF

この部品の機能は「Voltage Detectors」です。


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部品番号
82C18

VOLTAGE DETECTORS


UNISONIC TECHNOLOGIES CO., LTD 82CXX VOLTAGE DETECTORS 3 CMOS IC 4 5 2 1 „ DESCRIPTION The UTC 82CXX series are good performance 3-terminals voltage detectors and manufactured by CMOS technologi


Unisonic Technologies
Unisonic Technologies

データシート pdf


82C18

VOLTAGE DETECTORS



Unisonic Technologies
Unisonic Technologies

データシート pdf



文字列「 82C18 」「 82C18 」で始まる検索結果です。

部品説明

AD8218

Bidirectional Current Shunt Monitor

Data Sheet FEATURES High common-mode voltage range 4 V to 80 V operating −0.3 V to +85 V survival Buffered output voltage Gain = 20 V/V Wide operating temperature range: −40°C to +125°C Excellent ac and dc performance ±100 nV/°C typical offset drift ±50 µV typical offse

Analog Devices
Analog Devices

 データシート pdf


AS8218

Highly Integrated Single Phase 2 Current Energy Metering Integrated Circuits

AS8218 / AS8228 Highly Integrated Single Phase 2-Current Energy Metering Integrated Circuits with Microcontroller, RTC, Programmable Multi-Purpose I/Os and LCD Driver DATA SHEET 1. Key Features - - Precision single-phase, one or two current input energy m

austriamicrosystems AG
austriamicrosystems AG

 データシート pdf


AS8218

Highly Integrated Single Phase 2 Current Energy Metering Integrated Circuits

AS8218 / AS8228 Highly Integrated Single Phase 2-Current Energy Metering Integrated Circuits with Microcontroller, RTC, Programmable Multi-Purpose I/Os and LCD Driver DATA SHEET 1. Key Features - - Precision single-phase, one or two current input energy m

austriamicrosystems AG
austriamicrosystems AG

 データシート pdf


CEC8218

Dual N-Channel Enhancement Mode Field Effect Transistor

CEC8218 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 7A, RDS(ON) = 20mΩ @VGS = 4.5V. RDS(ON) = 28mΩ @VGS = 2.5V. RDS(ON) = 48mΩ @VGS = 1.8V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead fre

CET
CET

 データシート pdf


CEJ8218

Dual N-Channel Enhancement Mode Field Effect Transistor

www.datasheet.jp Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 6.5A, RDS(ON) = 23mΩ @VGS = 4.5V. RDS(ON) = 34mΩ @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acq

CET
CET

 データシート pdf


DAC8218

Octal 14-Bit Low-Power High-Voltatge Output Serial Input D/A Converter (Rev. A)

Texas Instruments
Texas Instruments

 データシート pdf

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