| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | 80N60A | IZGK80N60A Preliminary data HiPerFASTTM IGBT IXGK80N60A VCES IC25 VCE(sat) tfi = 600 V = 80 A = 2.7 V = 275 ns Symbol VCES VCGR V GES V GEM I C25 I C90 I CM SSOA (RBSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150 °C TJ = 25° C to 150°C; R GE = 1 M Ω Continuous Transient TC = 25°C, limited by leads TC = 90°C TC = 25° C, 1 ms VGE = 15 V, TVJ |
 IXYS Corporation |
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Recommended search results related to 80N60A |
| Part No | Description ( Function) | Manufacturers | |
| 80N60 | N-Channel Enhancement Mode Field Effect Transistor CMP80N06/CMB80N06/CMI80N06 N-Channel Enhancement Mode Field Effect Transistor General Description Product Summery The 80N06 is N-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. Feat |
 Cmos |
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| 80N60B | High Current IGBT High Current IGBT Short Circuit SOA Capability IXSK 80N60B IXSX 80N60B VCES = IC25 = =VCE(sat) 600 V 160 A 2.5 V Symbol V CES VCGR V CES VGEM I C25 IC90 I L(RMS) ICM SSOA (RBSOA) tsc SCSOA PC TJ TJM Tstg TL Md Weight Symbol BVCES VGE(th) ICES IGES VCE(sat) Test Conditions M |
 IXYS |
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| FCD380N60E | N-Channel MOSFET FCD380N60E N-Channel MOSFET March 2013 FCD380N60E N-Channel SuperFET® II MOSFET 600 V, 10.2 A, 380 mΩ Features • 650 V @TJ = 150°C • Max. RDS(on) = 380 mΩ • Ultra Low Gate Charge (Typ. Qg = 34 nC) • Low Effective Output Capacitance (Typ. Coss.eff = 97 pF) • 100% A |
 Fairchild Semiconductor |
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| FCP380N60 | N-Channel MOSFET FCP380N60 / FCPF380N60 N-Channel MOSFET March 2013 FCP380N60 / FCPF380N60 N-Channel SuperFET® II MOSFET 600 V, 10.2 A, 380 mΩ Features • 650 V @TJ = 150°C • Max. RDS(on) = 380 mΩ • Ultra low gate charge (typ. Qg = 30 nC) • Low effective output capacitance (typ. Coss |
Fairchild Semiconductor |
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| FCP380N60E | N-Channel MOSFET FCP380N60E / FCPF380N60E N-Channel MOSFET March 2012 FCP380N60E / FCPF380N60E 600V N-Channel MOSFET Features • 650V @TJ = 150°C • Max. RDS(on) = 380mΩ • Ultra Low Gate Charge (Typ. Qg = 34nC) • Low Effective Output Capacitance (Typ. Coss.eff = 97pF) • 100% Avalanche |
Fairchild Semiconductor |
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List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
|
| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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