データシート PDF 検索 - DataSheet.jp

80N60 データシート PDF

この部品の機能は「N-channel Enhancement Mode Field Effect Transistor」です。


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部品番号
80N60

N-Channel Enhancement Mode Field Effect Transistor


CMP80N06/CMB80N06/CMI80N06 N-Channel Enhancement Mode Field Effect Transistor General Description Product Summery The 80N06 is N-ch MOSFET with extreme high cell density , which provide excellent RDS


Cmos
Cmos

データシート pdf



文字列「 80N60 」「 80N60 」で始まる検索結果です。

部品説明

80N60A

IZGK80N60A

Preliminary data HiPerFASTTM IGBT IXGK80N60A VCES IC25 VCE(sat) tfi = 600 V = 80 A = 2.7 V = 275 ns Symbol VCES VCGR V GES V GEM I C25 I C90 I CM SSOA (RBSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150 °C TJ = 25° C to 150°C; R GE = 1

IXYS Corporation
IXYS Corporation

 データシート pdf


80N60B

High Current IGBT

High Current IGBT Short Circuit SOA Capability IXSK 80N60B IXSX 80N60B VCES = IC25 = =VCE(sat) 600 V 160 A 2.5 V Symbol V CES VCGR V CES VGEM I C25 IC90 I L(RMS) ICM SSOA (RBSOA) tsc SCSOA PC TJ TJM Tstg TL Md Weight Symbol BVCES VGE(th) ICES IGES VCE(sat) Test Conditions M

IXYS
IXYS

 データシート pdf


ADC08060

8-Bit/ 20 MSPS to 60 MSPS/ 1.3 mW/MSPS A/D Converter

ADC08060 8-Bit, 60 MSPS, 1.3 mW/MSPS A/D Converter January 2003 ADC08060 8-Bit, 20 MSPS to 60 MSPS, 1.3 mW/MSPS A/D Converter General Description The ADC08060 is a low-power, 8-bit, monolithic analog-todigital converter with an on-chip track-and-hold circuit. Optimized for low

National Semiconductor
National Semiconductor

 データシート pdf


ADC08060

ADC08060 8Bit 20MSPS to 60MSPS 1.3 mW /MSPS A/D Conv w/ Inter Sample-and-Hold (Rev. H)

Texas Instruments
Texas Instruments

 データシート pdf


ADC08060CIMT

8-Bit/ 20 MSPS to 60 MSPS/ 1.3 mW/MSPS A/D Converter

ADC08060 8-Bit, 60 MSPS, 1.3 mW/MSPS A/D Converter January 2003 ADC08060 8-Bit, 20 MSPS to 60 MSPS, 1.3 mW/MSPS A/D Converter General Description The ADC08060 is a low-power, 8-bit, monolithic analog-todigital converter with an on-chip track-and-hold circuit. Optimized for low

National Semiconductor
National Semiconductor

 データシート pdf


AGR18060E

Lateral MOSFET

AGR18060E 60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor Introduction The AGR18060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for enhanced data for global evolution (EDGE), global system fo

TriQuint Semiconductor
TriQuint Semiconductor

 データシート pdf

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