| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | 7NM60 | 600V N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 7NM60 Preliminary 7.4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7NM60 is a high voltage super junction MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switchi |
 UNISONIC TECHNOLOGIES |
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0 1 2 3 4 5 6 7 8 9 |
Recommended search results related to 7NM60 |
| Part No | Description ( Function) | Manufacturers | |
| STB27NM60ND | N-channel Power MOSFET STB27NM60ND, STW27NM60ND Automotive-grade N-channel 600 V, 0.13 Ω, 21 A FDmesh™ II Power MOSFETs (with fast diode) in D2PAK and TO-247 packages Datasheet - production data Features TAB 3 1 D2PAK TO-247 3 2 1 Figure 1. Internal schematic diagram $4!" ' 3 !- |
 STMicroelectronics |
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| STD7NM60N | N-channel Power MOSFET STD7NM60N, STF7NM60N STP7NM60N, STU7NM60N N-channel 600 V, 4.7 A, DPAK, TO-220FP, TO-220, IPAK second generation MDmesh™ Power MOSFET Preliminary data Features Type STD7NM60N STF7NM60N STP7NM60N STU7NM60N ■ ■ ■ VDSS @ TJmax RDS(on) max ID Pw 2 3 3 1 2 650 V < 0.9 |
STMicroelectronics |
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| STF7NM60N | N-channel Power MOSFET STD7NM60N, STF7NM60N STP7NM60N, STU7NM60N N-channel 600 V, 4.7 A, DPAK, TO-220FP, TO-220, IPAK second generation MDmesh™ Power MOSFET Preliminary data Features Type STD7NM60N STF7NM60N STP7NM60N STU7NM60N ■ ■ ■ VDSS @ TJmax RDS(on) max ID Pw 2 3 3 1 2 650 V < 0.9 |
STMicroelectronics |
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| STL7NM60N | N-channel Power MOSFET STL7NM60N N-channel 600 V, 0.805 Ω, 5.8 A PowerFLAT™ 5x5 MDmesh™ II Power MOSFET Features Order code STL7NM60N VDSS @ TJMAX 650 V RDS(on) max. < 0.90 Ω ID 5.8 A(1) 1. The value is rated according Rthj-case ■ 100% avalanche tested ■ Low input capacitance and gat |
STMicroelectronics |
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| STP7NM60N | N-channel Power MOSFET STD7NM60N, STF7NM60N STP7NM60N, STU7NM60N N-channel 600 V, 4.7 A, DPAK, TO-220FP, TO-220, IPAK second generation MDmesh™ Power MOSFET Preliminary data Features Type STD7NM60N STF7NM60N STP7NM60N STU7NM60N ■ ■ ■ VDSS @ TJmax RDS(on) max ID Pw 2 3 3 1 2 650 V < 0.9 |
STMicroelectronics |
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List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
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| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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