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6N80 データシート PDF 検索

番号 部品番号 部品説明 メーカ PDF
4 6N80

N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 6N80 ·FEATURES ·Drain Current ID= 6A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple Drive Requirements ·DESCRITION ·Switch mode power supply. ·ABSOLUTE MAXIMUM RATINGS(Ta=25

Inchange Semiconductor
Inchange Semiconductor
6N80 データシート pdf
3 6N80

N-Channel Power MOSFET

SEMICONDUCTOR 6N80 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET DESCRIPTION (6A, 800Volts) The Nell 6N80 is a three-terminal silicon device with current conduction capability of 6A, fast switching speed, low on-state resistance, breakdown voltage rating of 800V ,and max. threshold voltage of 5 volts. They are designed for use in applications. such as sw

nELL
nELL
6N80 データシート pdf
2 6N80

N-CHANNEL POWER MOSFET

6N80 UNISONIC TECHNOLOGIES CO., LTD Preliminary 6A, 800V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 6N80 is a N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energ

UTC
UTC
6N80 データシート pdf
1 6N80

N-Channel Enhancement Mode

Standard Power MOSFET N-Channel Enhancement Mode VDSS IXTH/IXTM 6 N80 800 V IXTH/IXTM 6 N80A 800 V ID25 6A 6A RDS(on) 1.8 Ω 1.4 Ω Symbol VDSS VDGR V GS VGSM I D25 I DM PD TJ TJM Tstg Md Weight Test Conditions TJ = 25 °C to 150°C TJ = 25 °C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25 °C TC = 25° C, pulse width limited by TJM TC = 25 °C Maximum Ratings 80

ETC
ETC
6N80 データシート pdf


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