6N60H データシート PDFこの部品の機能は「N-channel Mosfet」です。 |
検索結果を表示する |
部品番号 |
6N60H N-CHANNEL MOSFET 6N60(F,B,H) 6A mps,600 Volts N-CHANNEL MOSFET FEATURE 6A,600V,RDS(ON)=1.2Ω@VGS=10V/3A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capabilit CHONGQING PINGYANG |
文字列「 6N60 」「 6N60H 」で始まる検索結果です。 |
部品説明 |
6N60 N-CHANNEL MOSFET 6N60(F,B,H) 6A mps,600 Volts N-CHANNEL MOSFET FEATURE 6A,600V,RDS(ON)=1.2Ω@VGS=10V/3A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability TO-220AB 6N60 ITO-220AB 6N60F TO-263 6N60B TO-262 6N60H Absolute Maximum CHONGQING PINGYANG |
6N60 600V N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 6N60 6.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche Unisonic Technologies |
6N60 N-Channel Power MOSFET / Transistor SEMICONDUCTOR 6N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (6A, 600Volts) DESCRIPTION The Nell 6N60 is a three-terminal silicon device with current conduction capability of 6A, fast switching speed, low on-state resistance, breakdown voltage rating of 60 nELL |
6N60 N-Channel Mosfet Transistor INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification 6N60 ·FEATURES ·Drain Current –ID= 6A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.2Ω(Max) ·Avalanche Energy Specified ·Fast Switchin INCHANGE |
6N60 N-CHANNEL MOSFET 6N60 Power Mosfet 6.2 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The 6N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This p ART CHIP |
6N60-C N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 6N60-C 6.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N60-C is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avala Unisonic Technologies |
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