50SQ100TR データシート PDFこの部品の機能は「Schottky Rectifier ( Diode )」です。 |
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部品番号 |
50SQ100TR Schottky Rectifier ( Diode ) Bulletin PD-2.060 rev. F 03/03 50SQ... SERIES SCHOTTKY RECTIFIER 5 Amp Major Ratings and Characteristics Characteristics IF(AV) Rectangular waveform VRRM range IFSM @ tp = 5 µs sine VF TJ @ 5 Apk, International Rectifier |
文字列「 50SQ100 」「 50SQ100TR 」で始まる検索結果です。 |
部品説明 |
50SQ100 Diode ( Rectifier ) American Microsemiconductor |
50SQ100 Schottky Rectifier ( Diode ) Bulletin PD-2.060 rev. F 03/03 50SQ... SERIES SCHOTTKY RECTIFIER 5 Amp Major Ratings and Characteristics Characteristics IF(AV) Rectangular waveform VRRM range IFSM @ tp = 5 µs sine VF TJ @ 5 Apk, TJ = 125°C range Description/ Features Units A V A V °C The 50SQ... axial lea International Rectifier |
50SQ100 Diode Schottky 100V 5A 2-Pin DO-204AR New Jersey Semiconductor |
5SNA0400J650100 IGBT Module VCE = IC = 6500 V 400 A ABB HiPakTM IGBT Module 5SNA 0400J650100 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • High insulation package • AlSiC base-plate for high power cycling capability • AlN substrate for low thermal resistance Do ABB |
5SNA0600G650100 IGBT Module VCE = IC = 6500 V 600 A ABB HiPakTM IGBT Module 5SNA 0600G650100 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • High insulation package • AlSiC base-plate for high power cycling capability • AlN substrate for low thermal resistance Do ABB |
5SNA1200E250100 IGBT Module VCE = IC = 2500 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200E250100 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power cycling capability • AlN substrate for ABB |
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