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Datasheet 50N06 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
10 | 50N06 | N-CHANNEL MOSFET 50N06(F,B,H)
50A mps,60 Volts N-CHANNEL MOSFET
FEATURE
50A,60V,RDS(ON)=16mΩ@VGS=10V/25A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability
TO-220AB 50N06
ITO-220AB 50N06F
TO-263 50N06B
TO-262 50N06H
Absolute Maximum Ratings(TC=25 |
CHONGQING PINGYANG |
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9 | 50N06 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
50N06
·DESCRIPTION ·Drain Current ID= 50A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 60V(Min) ·Fast Switching Speed
·APPLICATIONS ·General purpose power amplifier
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
ARAM |
Inchange Semiconductor |
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8 | 50N06 | Power-Transistor Shenzhen Tuofeng Semiconductor Technology Co., Ltd
50N06
Power-Transistor
Features • For fast switching converters and sync. rectification • N-channel enhancement - normal level • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant
Product Summary V DS |
Tuofeng Semiconductor |
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7 | 50N06 | Low voltage high current power MOS FET 50N06
* '6
72
Available
RoHS*
COMPLIANT
'
* 6
VDS ID VGS PD TJ Tstg EAS
52.4
Ciss Coss Crss
VDS=2v, V GS=0V,f=1.0MHZ VDS=2v,V GS=0V,f=1.0MHZ VDS=2v,V GS=0V,f=1.0MHZ
特性参数值(TC=25ºC)
参数说明 漏源反向电压 漏源截止电流 栅源截止电流
通态电阻
栅源� |
ETC |
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Número de pieza | Descripción | Fabricantes | |
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