5.0SMLJ12A データシート PDFこの部品の機能は「Tvs Diode, Smd (transient Voltage Suppressor)」です。 |
検索結果を表示する |
部品番号 |
5.0SMLJ12A (5.0SMLJ11A - 5.0SMLJ170A) Transient Voltage Suppressor www.Datasheet.jp MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 5.0SMLJ11A THRU 5.0SMLJ17 MCC |
5.0SMLJ12A TVS Diode, SMD (Transient Voltage Suppressor) MDE Semiconductor, Inc. 78-150 Calle Tampico, Unit 210, La Quinta, CA., USA 92253 Tel : 760-564-8656 • Fax : 760-564-2414 1-800-831-4881 Email: [email protected] Web: www.mdesemiconductor.c MDE |
文字列「 50SMLJ12 」「 5.0SMLJ12A 」で始まる検索結果です。 |
部品説明 |
05012GOF Silicon Controlled Rectifier Microsemi Corporation |
05012GOF Silicon Controlled Rectifier Microsemi Corporation |
1N5012A (1N5008A - 1N5042A) DIODE Free Datasheet http:/// New Jersey Semi-Conductor |
2N5012 Bipolar NPN Device in a Hermetically sealed TO39 Metal Package 2N5012 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device. 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. VCEO = 700V Seme LAB |
2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD DATA SHEET SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Small Package • High Gain Bandwidth Product (fT = 9 GHz TYP.) • Low Noise, High Gain • Low Voltage Operation 0.3 +0.1 –0.05 PA NEC |
2SC5012-T1 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD DATA SHEET SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Small Package • High Gain Bandwidth Product (fT = 9 GHz TYP.) • Low Noise, High Gain • Low Voltage Operation 0.3 +0.1 –0.05 PA NEC |
当社のサイトでは、半導体やセンサーからモーター、電源に至るまで、さまざまな製品のデータシートを簡単に検索してダウンロードできる集中型プラットフォームを提供しています。 |