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Datasheet 4N65 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 14 | 4N65 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
4N65
DESCRIPTION ·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 650V(Min) ·Fast Switching Speed
APPLICATIONS Switching applications in power supplies, PWM motor controls, High efficient DC to DC co |
 Inchange Semiconductor |
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| 13 | 4N65 | 650 Volts N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 4N65
4A, 650V N-CHANNEL POWER MOSFET
DESCRIPTION
1
Power MOSFET
1
TO-220
TO-220F
The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged av |
 Unisonic Technologies |
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| 12 | 4N65-C | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
4N65-C
4A, 650V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 4N65-C is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This pow |
Unisonic Technologies |
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| 11 | 4N65-E | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
4N65-E
4A, 650V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 4N65-E is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This pow |
Unisonic Technologies |
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