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Datasheet 4N60S Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 4N60S | N-Channel MOSFET 4A, 600V, N沟道功率场效应晶体管【产品参数规格书】
工业型号
FQU4N60 FQD4N60
公司型号 通俗命名
H
H4N60I H4N60S
4N60 HAOHAI
封装 标识
N-Channel Power Field Effect Transistoe 英文与中文简体版本 无铅产品提供SGS环保认证, 符合欧美RoHS环保 |  HAOHAI | mosfet |
4N6 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 4N60 | N-CHANNEL MOSFET KIA
SEMICONDUCTORS
600V N-CHANNEL MOSFET
4N60
1.Description
The KIA4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually use  KIA mosfet | | |
| 2 | 4N60 | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 4N60
4 Amps, 600 Volts N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This  Unisonic Technologies mosfet | | |
| 3 | 4N60 | 600Volts N-Channel MOSFET www.DataSheet4U.net
4N60
4 Amps，600Volts N-Channel MOSFET
■ Description
The ET4N60 N-Channel enhancement mode silicon gate designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. power MOSFET  Estek Electronics mosfet | | |
| 4 | 4N60 | N-Channel Power MOSFET, Transistor SEMICONDUCTOR
4N60 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET (4A, 600Volts)
DESCRIPTION
The Nell 4N60 is a three-terminal silicon device with current conduction capability of 4A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. thresho  nELL mosfet | | |
| 5 | 4N60 | 600V N-Channel MOSFET 600V N-Channel MOSFET GENERAL DESCRIPTION
This Power MOSFET is produced using advanced planar stripe DMOS technology. This latest technology has been especially designed to minimize on-state resistance, Have a high rugged avalanche characteristics.These devices are well suited for high efficiency sw  GFD mosfet | | |
| 6 | 4N60 | Surface Mount N-Channel Power MOSFET 4N60
Surface Mount N-Channel Power MOSFET
P b Lead(Pb)-Free
Description:
The WEITRON 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOS  WEITRON mosfet | | |
| 7 | 4N60 | N-Channel Mosfet Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
4N60
DESCRIPTION ·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 600V(Min) ·Fast Switching Speed
APPLICATIONS ·General purpose power amplifier
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER  INCHANGE mosfet | |
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