Datasheet 4N36 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	4N36	Optocouplers (Rev. C)	Texas Instruments	data
2	4N36	Diode, Rectifier	American Microsemiconductor	diode
3	4N36	GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS 4N25 4N37 4N26 H11A1 4N27 H11A2 4N28 H11A3 4N35 H11A4 SCHEMATIC 1 6 4N36 H11A5 WHITE PACKAGE (-M SUFFIX) 6 1 6 2 5 3 NC 4 1 6 1 PIN 1. ANODE 2. CATHODE 3. NO CONNECTION 4. EMITTER 5. COLLECTOR 6. BASE BLACK PACKAGE (NO -M SUFFIX) 6 1 6 1	Fairchild Semiconductor	transistor
4	4N36	STANDARD THRU HOLE CASE 730A-04 MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 4N35/D GlobalOptoisolator™ 6-Pin DIP Optoisolators Transistor Output The 4N35, 4N36 and 4N37 devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • Curren	Motorola Inc	data
5	4N36	PHOTO TRANSISTOR (AC LINE/DIGITAL LOGIC ISOLATOR) 4N35,4N36,4N37(Short) TOSHIBA Photocoupler GaAs IRed & Photo−Transistor 4N35(Short), 4N36(Short), 4N37(Short) AC Line / Digital Logic Isolator. Digital Logic / Digital Logic Isolator. Telephone Line Receiver. High Frequency Power Supply Feedback Control. Relay Contact Monitor. The TOSHIBA 4N35 (s	Toshiba Semiconductor	transistor

4N3 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	4N30	STANDARD THRU HOLE CASE 730A-04 MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 4N29/D 6-Pin DIP Optoisolators Darlington Output The 4N29/A, 4N30, 4N31, 4N32(1) and 4N33(1) devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. This series i	Motorola Inc	data
2	4N30	PHOTO TRANSISTOR (AC LINE/DIGITAL LOGIC ISOLATOR)	Toshiba Semiconductor	transistor
3	4N30	GENERAL PURPOSE 6-PIN PHOTODARLINGTON OPTOCOUPLERS GENERAL PURPOSE 6-PIN PHOTODARLINGTON OPTOCOUPLERS DESCRIPTION The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. 4N29 4N30 4N31 4N32 4N33 FEATURES • High sensitivity to low input drive current • Meets or exceeds	QT Optoelectronics	data
4	4N30	General Purpose 6-Pin Photodarlington Optocoupler 4N29, 4N30, 4N31, 4N32, 4N33 General Purpose 6-Pin Photodarlington Optocoupler April 2007 4N29, 4N30, 4N31, 4N32, 4N33 General Purpose 6-Pin Photodarlington Optocoupler Features ■ High sensitivity to low input drive current ■ Meets or exceeds all JEDEC Registered tm Description The 4N29, 4N3	Fairchild Semiconductor	data
5	4N30Z	40A 300V N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 4N30Z 4A, 300V N-CHANNEL POWER MOSFET DESCRIPTION Power MOSFET The U TC 4N30Z is an N-ch annel mod e p ower MOSF ET using UTC’s advanc ed techn ology to provid e customers with a minimum on-state res istance, lo w gate charge a nd superior s witching performance	UNISONIC TECHNOLOGIES	mosfet
6	4N31	STANDARD THRU HOLE CASE 730A-04 MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 4N29/D 6-Pin DIP Optoisolators Darlington Output The 4N29/A, 4N30, 4N31, 4N32(1) and 4N33(1) devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. This series i	Motorola Inc	data
7	4N31	PHOTO TRANSISTOR (AC LINE/DIGITAL LOGIC ISOLATOR)	Toshiba Semiconductor	transistor

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Número de pieza	Descripción	Fabricantes	PDF
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