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Datasheet 4N10 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | 4N10 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
4N10
·FEATURES ·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 100V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.8Ω(Max) ·Fast Switching
·APPLICATIONS ·Switching power supplies,converte |
 Inchange Semiconductor |
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| 1 | 4N100 | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
4N100
Preliminary
4A, 1000V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 4N100 is an N-channel MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed and high breakdown voltage.
FEATURES
* RDS(ON) < 3.5Ω @ VGS=10V, I |
 Unisonic Technologies |
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