AP4957AGM RoHS-compliant Product Advanced Power Electronics Corp. ▼ Low On-Resistance ▼ Simple Drive Requirement D1 D2 D1 D2 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID G2 S2 -30V

SEMICONDUCTOR 42.0(1.65)DIA. MAX. l B TYPE 20 3.5(0.138) DIA. 25.0(0.98) DIA. Max. 15.01(0.59) Max. All dimensions in millimeters ( inches ) SEMICONDUCTOR 495PT Series RRooHHSS www.nellsemi.com Page 2 of 3 SEMICONDUCTOR 495PT Series RRooHHSS 31.25 2.5 μ ， www.ne

Shenzhen Tuofeng Semiconductor Technology 4Co9.,5L3tdB 4953B Dual 20V P-Channel PowerTrench® MOSFET General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applic

Shenzhen Tuofeng Semiconductor Technology 4Co9.,5L3tdA 4953A Dual 30V P-Channel PowerTrench® MOSFET General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applic

Shenzhen Tuofeng Semiconductor Technology 4Co9.,5L3td 4953 Dual 30V P-Channel PowerTrench® MOSFET General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applicat

AP4953GM RoHS-compliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Low Gate Charge ▼ Fast Switching D1 G2 S2 D2 D1 D2 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 53mΩ -5A SO-8 S1 G1 Description Advan

AP4957AGM RoHS-compliant Product Advanced Power Electronics Corp. ▼ Low On-Resistance ▼ Simple Drive Requirement D1 D2 D1 D2 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID G2 S2 -30V 26mΩ -7.4A ▼ Dual P MOSFET Package SO-8 S1 G1 Description Advanced Power M