4835 データシート PDFこの部品の機能は「P-channel Enhancement Mode Field Effect Transistor」です。 |
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部品番号 |
4835 P-Channel Enhancement Mode Field Effect Transistor Shenzhen Tuofeng Semiconductor Technology co., LTD 4835 P-Channel Enhancement Mode MOSFET Features Pin Description • -30V/-8A, RDS(ON) = 16mΩ(typ.) @ VGS = -10V RDS(ON) = 24mΩ(typ.) @ VGS = Tuofeng Semiconductor |
文字列「 4835 」「 4835 」で始まる検索結果です。 |
部品説明 |
4835P AF4835P AF4835P P-Channel Enhancement Mode Power MOSFET Features - Simple Drive Requirement - Low On-resistance - Fast Switching General Description The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resist Anachip Corporation |
2SC4835 Silicon NPN epitaxial planer type(For UHF band low-noise amplification) Transistor 2SC4835 Silicon NPN epitaxial planer type For UHF band low-noise amplification Unit: mm 2.1±0.1 s Features q q q q 0.425 1.25±0.1 0.425 Low noise figure NF. High gain. High transition frequency fT. S-Mini type package, allowing downsizing of the equipment and a Panasonic Semiconductor |
AF4835P P-Channel Enhancement Mode Power MOSFET AF4835P P-Channel Enhancement Mode Power MOSFET Features - Simple Drive Requirement - Low On-resistance - Fast Switching General Description The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resist ETC |
AF4835PS P-Channel Enhancement Mode Power MOSFET AF4835P P-Channel Enhancement Mode Power MOSFET Features - Simple Drive Requirement - Low On-resistance - Fast Switching General Description The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resist ETC |
AF4835PSA P-Channel Enhancement Mode Power MOSFET ETC |
AF4835PSL P-Channel Enhancement Mode Power MOSFET AF4835P P-Channel Enhancement Mode Power MOSFET Features - Simple Drive Requirement - Low On-resistance - Fast Switching General Description The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resist ETC |
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