40HFR120M データシート PDFこの部品の機能は「Power Rectifier」です。 |
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部品番号 |
40HFR120M SILICON POWER DIODES 40HF/40HFR SILICON POWER DIODES DO-5 FEATURES • All Diffused Series • Available in Normal & Reverse Polarity • Industrial Grade • Available In Avalanche Characteristic * Available in metric an Naina Semiconductor |
40HFR120M POWER RECTIFIER 40HF(R) SERIES POWER RECTIFIER Reverse Voltage - 100 to 1600 Volts Forward Current - 40.0 Amperes Features High surge current capability Designed for a wide range of applications Stud cathode and stu GOOD-ARK Electronics |
文字列「 40HFR120 」「 40HFR120M 」で始まる検索結果です。 |
部品説明 |
40HFR120 POWER RECTIFIER 40HF(R) SERIES POWER RECTIFIER Reverse Voltage - 100 to 1600 Volts Forward Current - 40.0 Amperes Features High surge current capability Designed for a wide range of applications Stud cathode and stud anode version Leaded version available Types up to 1600V VRRM Typical Applica GOOD-ARK Electronics |
40HFR120 SILICON POWER DIODES 40HF/40HFR SILICON POWER DIODES DO-5 FEATURES • All Diffused Series • Available in Normal & Reverse Polarity • Industrial Grade • Available In Avalanche Characteristic * Available in metric and UNF thread ELECTRICAL SPECIFICATIONS IF(AV) Maximum Average Forward Current Te Naina Semiconductor |
40HFR120 Standard Recovery Diodes 40HF(R) Series Vishay High Power Products Standard Recovery Diodes, (Stud Version), 40 A FEATURES • • • • High surge current capability Stud cathode and stud anode version Leaded version available Types up to 1600 V VRRM RoHS COMPLIANT • RoHS compliant • Designed a Vishay Siliconix |
40HFR120 SILICON POWER DIODES 40HF/40HFR SILICON POWER DIODES DO-5 FEATURES • All Diffused Series • Available in Normal & Reverse Polarity • Industrial Grade • Available In Avalanche Characteristic * Available in metric and UNF thread ELECTRICAL SPECIFICATIONS IF(AV) Maximum Average Forward Current Te Naina Semiconductor |
40HFR120 Diode 1.2KV 40A 2-Pin DO-5 New Jersey Semiconductor |
C2M0040120D Silicon Carbide Power MOSFET VDS 1200 V C2M0040120D Silicon Carbide Power MOSFET TM C2M MOSFET Technology ID @ 25˚C 60 A RDS(on) 40 mΩ N-Channel Enhancement Mode Features Package • High Blocking Voltage with Low On-Resistance • High Speed Switching with Low Capacitances Cree |
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