Datasheet 3N165-6 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	3N165-6	MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE MOSFET 3N165, 3N166 MONOLITHIC DUAL P-CHANNEL Linear Integrated Systems FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS (NOTE 1) (TA= 25°C unless otherwise noted) Drain-Source or Drain-Gate Voltage (NOTE 2) 3N165 3N166 Transient G-S Voltag	Linear Integrated Systems

3N16 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
3N169	(3N169 - 3N171) MOSFETs Switching	Motorola Semiconductor
3N163	P-CHANNEL ENHANCEMENT MODE 3N163, 3N164 P-CHANNEL ENHANCEMENT MODE Linear Integrated Systems MOSFET FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE FAST SWITCHING LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS (NOTE 1) @ 25°C (unless otherwise noted) Drain-Source or Drain-Gate Voltag	Linear Integrated Systems
3N166	Amplifier 3N166 P-CHANNEL MOSFET The 3N166 is a monolithic dual enhancement mode P-Channel Mosfet FEATURES DIRECT REPLACEMENT FOR INTERSIL 3N166 ABSOLUTE MAXIMUM RATINGS1@ 25°C (unless otherwise noted) Maximum Temperatures The hermetically sealed TO-78 package is well	Micross

Esta página es del resultado de búsqueda del 3N165-6. Si pulsa el resultado de búsqueda de 3N165-6 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin.

Enlace url :

[1]

nuevas actualizaciones

Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap