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3DD13009 データシート PDF 検索 |
| 番号 | 部品番号 | 部品説明 | メーカ | |
| 12 | 3DD13009 | NPN Transistor Dayan Technology Industry Co., Ltd. Shenzhen 1. NPN 3DD13009 2. TO-220 3. 4. Ta=25 VCBO VCEO VEBO IC T a=25 PC T c=25 Tj Tstg 5 Ta=25 700 400 9 12 3.0 100 150 -55~150 V V V A W W B VCBO B VCEO B VEBO ICBO ICEO IEBO VCE sat VBEsat hFE tf ts fT Mi Ma nx IC= 1mA IE=0 700 V IC= 10 mA IB=0 400 V IE=1mA IC=0 VCB= 680 V IE=0 9 5 V µA VCE=390V IB=0 5 µA |
 Dayan Technology |
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| 11 | 3DD13009 | Silicon NPN triple diffusion type bipolar transistor 1 3DD13009 NPN 3DD13009 2 2.1 2.2 TO-220F Tamb= 25 - Ta=25 Tc=25 VCE0 VCB0 VEB0 IC Ptot Tj Tstg 400 700 9 12 2 100 150 -55 150 V V V A W Tamb= 25 10.4max 3.2 2.7max 4.8max 2.7 15.5max 1.2 0.6 2.54 2.54 BCE 12.7min 2.3 0.6 - ICB0 VCB=700V, IE=0 - IEB0 VEB=9V, IC=0 0.1 mA 0.1 mA hFEa VCE=5V, IC=3A 8 40 hFE1 hFE2 - - hFE1/ hFE2 VCE a sat VBE a sat hFE1 |
 ETC |
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| 10 | 3DD13009 | NPN Transistor 3DD13009(NPN) TO-220 Transistor 1. BASE TO-220 2. COLLECTOR Features 3 2 1 power switching applications 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage |
 LGE |
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| 9 | 3DD13009-A9 | Silicon NPN triple diffusion type bipolar transistor 产品概述 3DD13009 A9 是硅 NPN 型功率开关晶体管，该产品 采用平面工艺，分压环终端 结构和少子寿命控制技术， 提高了产品的击穿电压、开 关速度和可靠性。 硅三重扩散 NPN 双极型晶体管 3DD13009 A9 ○R 产品特点 ● 开关损耗低 ● 反向漏电流小 ● 高温特性好 ● 反向击穿电压高 ● 可靠 |
ETC |
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