Datasheet 3CG640 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	3CG640	PNP Silicon High Frequency Middle Power Transistor Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3CG640, 3CG708 PNP Silicon High Frequency Middle Power Transistor Features: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3	Qunli Electric

3CG Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
3CG708	SILICON PNP TRANSISTOR Dual 1 A, 18 V, Synchronous Step-Down Regulator with Fail-Safe Voltage Monitoring Data Sheet FEATURES Input voltage: 4.5 V to 18 V ±1.0% output accuracy Integrated MOSFET: 110 mΩ/60 mΩ typical Continuous output current: 1 A/1 A Power fail comparator generates warning Power-on	BLUE ROCKET
3CG1980	PNP Silicon Transistor 2SA1980 PNP Silicon Transistor Description • General small signal amplifier PIN Connection E Features • Low collector saturation voltage : VCE(sat)=-0.3V(Max.) • Low output capacitance : Cob=4pF(Typ.) • Complementary pair with 2SC5343 B C B E C TO-92 Ordering Info	Kodenshi
3CG953	SILICON PNP TRANSISTOR 2SA953(3CG953) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR 用途:用于音频放大、激励级放大。/Purpose: Audio frequency amplifier and driver stage. 特点:集电极耗散功率大,hFE 高,VCEO 高。/Features: High total power dissipation, high hFE and high VCE	LZG

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Número de pieza	Descripción	Fabricantes	PDF
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