38N30 データシート PDFこの部品の機能は「 Fqa38n30」です。 |
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部品番号 |
38N30 FQA38N30 FQA38N30 — N-Channel QFET® MOSFET FQA38N30 N-Channel QFET® MOSFET 300 V, 38.4 A, 85 mΩ Features • 38.4 A, 300 V, RDS(on) = 85 mΩ (Max.) @ VGS = 10 V, ID = 19.2 A • Low Gate Charge (Typ. 90 Fairchild Semiconductor |
文字列「 38N30 」「 38N30 」で始まる検索結果です。 |
部品説明 |
1N3830 (1N3821 - 1N3830A) SILICON 1 WATT ZENER DIODES 1N3821 thru 1N3830A 1 Watt Metal Case Zener Diodes SCOTTSDALE DIVISION DESCRIPTION This well established zener diode series for the 1N3821 thru 1N3830A JEDEC registration in the glass hermetic sealed DO-13 package provides a low voltage selection for 3.3 to 7.5 volts. It is also Microsemi Corporation |
1N3830 Diode Zener Single 7.5V 10% 1W 2-Pin DO-13 New Jersey Semiconductor |
1N3830A (1N3821 - 1N3830A) SILICON 1 WATT ZENER DIODES 1N3821 thru 1N3830A 1 Watt Metal Case Zener Diodes SCOTTSDALE DIVISION DESCRIPTION This well established zener diode series for the 1N3821 thru 1N3830A JEDEC registration in the glass hermetic sealed DO-13 package provides a low voltage selection for 3.3 to 7.5 volts. It is also Microsemi Corporation |
1N3830A Diode Zener Single 7.5V 5% 1W 2-Pin DO-13 New Jersey Semiconductor |
2SC3830 Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose) 2SC3830 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3830 600 500 10 6(Pulse12) 2 50(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Applicatio Sanken electric |
2SC3830 SILICON POWER TRANSISTOR SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·High voltage ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN 1 2 3 Base Collector;conne SavantIC |
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