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データシート 33N25 PDF ( Circuit Data ) |
| 番号 | 部品番号 | 部品説明 | メーカ | |
| 1 | 33N25 | FDB33N25 FDB33N25 250V N-Channel MOSFET September 2005 UniFET FDB33N25 250V N-Channel MOSFET Features • 33A, 250V, RDS(on) = 0.094Ω @VGS = 10 V • Low gate charge ( typical 36.8 nC) • Low Crss ( typic |
 Fairchild Semiconductor |
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33N データシート - 検索結果 |
| 部品番号 | 部品説明 | メーカ | |
| 33N10 | FQP33N10 FQP33N10 April 2000 QFET FQP33N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min |
Fairchild Semiconductor |
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| 33N10 | N-Channel MOSFET Transistor INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 33N10 ·FEATURES ·Drain Current ID= 33A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.06Ω(Max) ·Fast Switching ·APPLICATIONS ·Switching |
 Inchange Semiconductor |
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| 33N25 | FDB33N25 FDB33N25 250V N-Channel MOSFET September 2005 UniFET FDB33N25 250V N-Channel MOSFET Features • 33A, 250V, RDS(on) = 0.094Ω @VGS = 10 V • Low gate charge ( typical 36.8 nC) • Low Crss ( typical 39 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capabi |
Fairchild Semiconductor |
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