Datasheet 2SK4106 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	2SK4106	Field Effect Transistor 2SK4106 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK4106 Switching Regulator Applications Unit: mm • • • • Low drain-source ON resistance: RDS (ON) = 0.4 Ω (typ.) High forward transfer admittance: \|Yfs\| = 8.5 S (typ.) Low leakage current: IDSS = 100 μA (max)	Toshiba

2SK4 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
2SK405	Silicon N Channel MOS type	Toshiba America Electronic Components
2SK4005-01MR	Power MOSFET ( Transistor ) This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the m anufacturing purp oses without the expres	Fuji Electric
2SK439	Silicon N-Channel MOS FET 2SK439 Silicon N-Channel MOS FET Application VHF amplifier Outline SPAK 1 23 1. Gate 2. Source 3. Drain 2SK439 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Gate current Channel power dissipation Channel temperature	Hitachi Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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