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2SK3758 データシート PDF 検索

番号 部品番号 部品説明 メーカ PDF
1 2SK3758

Silicon N Channel MOS Type Field Effect Transistor

2SK3758 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) 2SK3758 Switching Regulator Applications unit • Low drain-source ON resistance: RDS (ON) = 1.35 (typ.) • High forward transfer admittance: |Yfs| = 3.5S (typ.) • Low leakage current: IDSS = 100 A (VDS = 500 V) • Enhancement-mode: V th = 2.0~4.0 V (V DS = 10 V, ID = 1 mA) /Circuit Maximum Ratin

Toshiba Semiconductor
Toshiba Semiconductor
2SK3758 データシート pdf




2SK3 データシート - 検索結果

部品番号 部品説明 メーカ PDF
2SK3666

N-Channel JFET

Ordering number : EN8158C 2SK3666 N-Channel JFET 30V, 0.6 to 3.0mA, 6.5mS, CP http://onsemi.com Applications • Low-frequency general-purpose amplifier, impedance conversion, infrared sensor applications Features • Small IGSS • Small Ciss Specifications Absolut

ON Semiconductor
ON Semiconductor
2SK3758 データシート pdf
2SK3160

Silicon N Channel MOS FET

2SK3160 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =130 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline REJ03G1085-0300 (Previous: ADE-208-751A) Rev.3.00 Sep 07, 2005 RENESAS Package

Renesas
Renesas
2SK3758 データシート pdf
2SK3082S

Silicon N Channel MOS FET High Speed Power Switching

2SK3082(L),2SK3082(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-637 (Z) 2nd. Edition May 1998 Features • Low on-resistance RDS(on) = 0.055 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline LDPAK 4 4 1 1 2 3 2

Hitachi Semiconductor
Hitachi Semiconductor
2SK3758 データシート pdf
2SK3640

MOS Field Effect Transistor

SMD Type Transistors IC 100V N-Channel PowerTrench MOSFET KDD3670 TO-252 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Features 34 A, 100 V. RDS(ON) = 32m RDS(ON) = 35m @ VGS = 10 V +0.2 9.70-0.2 Low gate charge (57 nC typical) Fast switching speed High performance trench technology fo

Kexin
Kexin
2SK3758 データシート pdf


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