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Datasheet 2SK366 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 12 | 2SK366 | Silicon N Channel Junction Type Transistor TOSHIBA Effect Transistor Silicon N Channel Junction Type
2SK366
For Audio Amplifier, Analog-Switch, Constant Current and Impedance Converter Applications
2SK366
Unit: mm
· High voltage: VGDS = −40 V · High input impedance: IGSS = −1.0 nA (max) (VGS = −30 V) · Low RDS (ON): RDS (ON) = 50 |
 Toshiba Semiconductor |
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| 11 | 2SK3662 | Silicon N Channel MOS Type Switching Regulator 2SK3662
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSII)
2SK3662
Switching Regulator, DC−DC Converter, Motor Drive Applications
• • • Low drain-source ON resistance: RDS (ON) = 9.4 mΩ (typ.) High forward transfer admittance: |Yfs| = 55 S (typ.) Low leakage current: ID |
Toshiba Semiconductor |
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| 10 | 2SK3663 | N-CHANNEL MOS FIELD EFFECT TRANSISTOR DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3663
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
DESCRIPTION
The 2SK3663 is a switching device which can be driven directly by a 2.5 V power source. The 2SK3663 features a low on-state resistance and excellent switching charact |
 NEC |
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| 9 | 2SK3664 | N-CHANNEL MOS FIELD EFFECT TRANSISTOR DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3664
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
DESCRIPTION
The 2SK3664 is a switching device, which can be driven directly by a 2.5 V power source. The device features a low on-state resistance and excellent switching charact |
NEC |
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