| No | Part number | Description ( Function ) | Manufacturers | |
| 13 | 2SK350 | N-Channel MOSFET Transistor INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK350 DESCRIPTION ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) ·Fast Switching Speed APPLICATIONS ·High speed power Switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 450 V VGS Gate-Source Voltage |
 Inchange Semiconductor |
|
| 12 | 2SK350 | Silicon N-Channel MOSFET |
 Hitachi |
|
| 11 | 2SK3501-01 | N-CHANNEL SILICON POWER MOSFET 2SK3501-01 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings TO-220AB Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (T |
 Fuji Electric |
|
| 10 | 2SK3502 | N CHANNEL SILICON POWER MOSET 2SK3502-01MR Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings TO-220F Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless othe |
Fuji Electric |
|
| 9 | 2SK3502-01MR | N CHANNEL SILICON POWER MOSET 2SK3502-01MR Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings TO-220F Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless othe |
Fuji Electric |
|
| 8 | 2SK3503 | N-Channel MOSFET SMD Type MOSFET N-Channel MOSFET 2SK3503 SOT-523 1.6 +0.1 -0.1 1.0 +0.1 -0.1 0.2 +0.05 -0.05 U nit: m m 0.15±0.05 0.55 (REF.) 0.8±0.1 0.36±0.1 ■ Features ● VDS (V) = 16V ● ID = 100 mA (VGS = 1.5V) ● RDS(ON) ＜ 50Ω (VGS = 1.5V) ● RDS(ON) ＜ 15Ω (VGS = 2.5V) ● RDS(ON) ＜ 12Ω (VGS = 4V) Gate 21 +0.151.6 -0.15 Drain Body Diode 3 0.5 +0.1 -0.1 0.3 |
 Kexin |
|
List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
|
| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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