SMD Type MOS Field Effect Transistor 2SK3402 TO-252 IC MOSFET Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Features Low on-resistance +0.2 9.70-0.2 +0.1 0.80-0.1 Built-in gate protection diode 2.3 +0.15

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3402 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3402 is N-Channel MOS Field Effect Transistor designed for high current switching applications.

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS 2SK1658 N-channel MOSFET V(BR)DSS 30 V RDS(on)MAX   10Ω@4V  15Ω@2.5V   ID 100mA SOT-323 1. GATE 2. SOURCE 3. DRAIN FEATURE z Low on-resistance z Fast switching speed z Low voltage

Ordering number : EN8147A 2SK3820 N-Channel Power MOSFET 100V, 26A, 60mΩ, TO-263-2L http://onsemi.com Features • ON-resistance RDS(on)1=45mΩ(typ.) • Input capacitance Ciss=2150pF (typ.) • 4V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbo

Power F-MOS FETs 2SK2126 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 100mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 40ns q No secondary breakdown unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2 s Applications 4.1±0.2

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK1607 DESCRIPTION ·Drain Current –ID=13A@ TC=25℃ ·Drain Source Voltage- : VDSS=450V(Min) APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching

2SK1161, 2SK1162 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS00