Datasheet 2SK3376TK Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	2SK3376TK	Silicon N Channel Junction Type 2SK3376TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3376TK For ECM • Application for Ultra-compact ECM 0.22±0.05 1.2±0.05 0.8±0.05 0.32±0.05 3 2 0.1±0.05 Unit: mm Absolute Maximum Ratings (Ta=25°C) 0.45 0.45 1.4±0.05 Characteristic Gate-Drain voltage Gate Curren	Toshiba Semiconductor

2SK337 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
2SK3377	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3377 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3377 2SK3377-Z PACKAGE TO-251 TO-252 DESCRIPTION The 2SK3377 is N-Channel MOS Field Effect Transistor designed for high current switching applica	NEC
2SK3377-Z	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3377 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3377 2SK3377-Z PACKAGE TO-251 TO-252 DESCRIPTION The 2SK3377 is N-Channel MOS Field Effect Transistor designed for high current switching applica	NEC
2SK3372	Silicon N-Channel Junction Silicon Junction FETs (Small Signal) 2SK3372 Silicon N-Channel Junction Unit: mm For impedance conversion in low frequency For electret capacitor microphone I Features • High mutual conductance gm • Low noise voltage of NV 0.33+0.05 –0.02 3 0.10+0.05 –0.02 (0.40) (0.	Panasonic

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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