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Datasheet 2SK322 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 8 | 2SK322 | Silicon N-Channel Junction FET 2SK322
Silicon N-Channel Junction FET
Application
HF wide band amplifier
Outline
MPAK
3 1 2
1. Drain 2. Source 3. Gate
2SK322
Absolute Maximum Ratings (Ta = 25°C)
Item Gate to drain voltage Gate to source voltage Drain current Gate current Channel power dissipation Channel temperature Storage |
 Hitachi Semiconductor |
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| 7 | 2SK3224 | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3224
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
ORDERING INFORMATION
PART NUMBER 2SK3224 2SK3224-Z PACKAGE TO-251 TO-252
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.
FEATURES
� |
 NEC |
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| 6 | 2SK3224-Z | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3224
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
ORDERING INFORMATION
PART NUMBER 2SK3224 2SK3224-Z PACKAGE TO-251 TO-252
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.
FEATURES
� |
NEC |
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| 5 | 2SK3225 | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
NEC |
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