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Datasheet 2SK3018 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
9 | 2SK3018 | N-Channel MOSFET JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate MOSFETS
2SK3018 N-channel MOSFET
V(BR)DSS
30 V
RDS(on)MAX
8Ω@4V
13Ω@2.5V
ID
100mA
SOT-323
1. GATE 2. SOURCE 3. DRAIN
FEATURE z Low on-resistance z Fast switching speed z Low voltage drive makes this devic |
JCET |
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8 | 2SK3018 | N-CHANNEL MOSFET 2SK3018
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions SOT-23 塑封封装 N 道 MOS 场效应管。N- CHANNEL MOSFET in a SOT-23 Plastic Package.
特征 / Features
低导通电阻,开关速度快,低电压驱动,简化驱动电路和简便平面。 Low on-resistance, fast switching speed, low |
BLUE ROCKET ELECTRONICS |
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7 | 2SK3018 | N-Channel Enhancement Mode Field Effect Transistor MCC TM
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth !"# $
% !"#
2SK3018
Features
• Low ON-Resistance • Low Input Capacitance • Low Voltage drive makes this device idipmenteal for portable equipment • Fa |
MCC |
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6 | 2SK3018 | N-Channel Enhancement Mode Field Effect Transistor Production specification
N-Channel Enhancement Mode Field Effect Transistor 2SK3018
FEATURES
z Low on-resistance. z Fast switching speed. z Low voltage drive(2.5V)makes this
Device ideal for portable equipment. z Easily designed drive circuits. z Easy to parallel.
Pb
Lead-free
APPLICATIONS
z Int |
Galaxy Microelectronics |
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Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
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