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Datasheet 2SK296 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 10 | 2SK296 | SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING |
 Hitachi Semiconductor |
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| 9 | 2SK2960 | Silicon N-Channel Power F-MOS FET Power F-MOS FETs
2SK2960
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed: EAS > 250mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 55ns q No secondary breakdown
unit: mm
4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2
M Di ain sc te on na tin nc ue e/ d
q Contac |
 Panasonic |
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| 8 | 2SK2961 | Silicon N Channel MOS Type Field Effect Transistor 2SK2961
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV)
2SK2961
Relay Drive, Motor Drive and DC−DC Converter Application
Unit: mm
z Low drain−source ON resistance : RDS (ON) = 0.2 Ω (typ.) z High forward transfer admittance : |Yfs| = 2.0 S (typ.) z Low leakage cu |
 Toshiba Semiconductor |
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| 7 | 2SK2962 | Silicon N Channel MOS Type Field Effect Transistor 2SK2962
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV)
2SK2962
Chopper Regulator, DC−DC Converter and Motor Drive Applications
Unit: mm
z 4-V gate drive
z Low drain−source ON resistance
: RDS (ON) = 0.5 Ω (typ.)
z High forward transfer admittance
: |Yfs| = 1 |
Toshiba Semiconductor |
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