www.Datasheet.jp 2SK2869(L), 2SK2869(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1037-0200 (Previous: ADE-208-570) Rev.2.00 Sep 07, 2005 Features • Low on-resistance RDS = 0.0

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS 2SK1658 N-channel MOSFET V(BR)DSS 30 V RDS(on)MAX   10Ω@4V  15Ω@2.5V   ID 100mA SOT-323 1. GATE 2. SOURCE 3. DRAIN FEATURE z Low on-resistance z Fast switching speed z Low voltage

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3056 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3056 2SK3056-S 2SK3056-ZJ PACKAGE TO-220AB TO-262 TO-263 DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high curr

2SK3211(L), 2SK3211(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-761A (Z) 2nd. Edition February 1999 Features • • • Low on-resistance RDS = 60 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source 2SK3211 Outline LDPAK 4 4

Power F-MOS FETs 2SK2126 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 100mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 40ns q No secondary breakdown unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2 s Applications 4.1±0.2

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK1607 DESCRIPTION ·Drain Current –ID=13A@ TC=25℃ ·Drain Source Voltage- : VDSS=450V(Min) APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching

Ordering number : ENA0777C 2SK4099LS N-Channel Power MOSFET 600V, 8.5A, 0.94Ω, TO-220F-3FS http://onsemi.com Features • ON-resistance RDS(on)=0.72Ω (typ.) • 10V drive • Input capacitance Ciss=750pF Specifications Absolute Maximum Ratings at Ta=25°C Parameter Sym