|
|
 |
2SK2869L データシート PDF 検索 |
| 番号 | 部品番号 | 部品説明 | メーカ | |
| 1 | 2SK2869L | Silicon N Channel MOS FET High Speed Power Switching www.Datasheet.jp 2SK2869(L), 2SK2869(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1037-0200 (Previous: ADE-208-570) Rev.2.00 Sep 07, 2005 Features • Low on-resistance RDS = 0.0 |
 Renesas Technology |
 |
2SK28 データシート - 検索結果 |
| 部品番号 | 部品説明 | メーカ | |
| 2SK2806-01 | N-channel MOS-FET 2SK2806-01 FAP-IIIB Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated N-channel MOS-FET 30V 0,02Ω 35A 30W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maxim |
 Fuji Electric |
|
| 2SK2874-01L | N-channel MOS-FET 2SK2874-01L,S FAP-IIS Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated N-channel MOS-FET 500V 1,5Ω ±6A 50W > Outline Drawing > Applications Switching Regulator |
Fuji Electric |
|
| 2SK2826-S | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2826 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK2826 2SK2826-S 2SK2826-ZJ PACKAGE TO-220AB TO-262 TO-263 DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high curr |
 NEC |
|
| 2SK2885S | Silicon N Channel MOS FET High Speed Power Switching 2SK2885(L), 2SK2885(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-545 A 2nd. Edition Features • Low on-resistance R DS(on) = 10mΩ typ. • 4V gate drive devices. • High speed switching Outline LDPAK 4 4 D 1 1 G 2 3 2 3 1. Gate 2. Drain 3. Source 4. D |
 Hitachi Semiconductor |
|
共有リンク :
|
Search Keywords : |
|
DataSheet.jpは、半導体や電子部品のデータシートをPDFファイルとして無料提供しています。 |