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2SK2082-01 データシート PDF ( Data )

番号 部品番号 部品説明 メーカ PDF
2 2SK2082-01

N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK2082-01 DESCRIPTION ·Drain Current ID= 9A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Fast Switching Sp

Inchange Semiconductor
Inchange Semiconductor
データシート pdf
1 2SK2082-01

N-channel MOS-FET

2SK2082-01 FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 900V 1,4

Fuji Electric
Fuji Electric
データシート pdf


2SK データシート - 検索結果

部品番号 部品説明 メーカ PDF
2SK3322

SWITCHING N-CHANNEL POWER MOSFET

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3322 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3322 is N-Channel DMOS FET device that ORDERING INFORMATION PART NUMBER 2SK3322 2SK3322-S 2SK3322-ZJ PACKAGE TO-220AB (MP-25) TO-262 TO-263(MP-25ZJ) TO-263(

NEC
NEC
 データシート pdf
2SK2489

VZ Series Power MOSFET(180V 10A)

SHINDENGEN VZ Series Power MOSFET N-Channel Enhancement type 2SK2489 ( F10S18VZ ) 180V 10A FEATURES •œ Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. •œ The static Rds(on) is small. •œ The switching time is fast. APPLICATION OUTLI

Shindengen Electric Mfg.Co.Ltd
Shindengen Electric Mfg.Co.Ltd
 データシート pdf
2SK3076L

Silicon N Channel MOS FET High Speed Power Switching

2SK3076(L),2SK3076(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-656 (Z) 1st. Edition Jun 1998 Features • • • • Low on-resistance High speed switching Low drive current. Built-in fast recovery diode (trr=120 ns) Outline LDPAK 4 4 D 1 G 1 2 3 2 3 S

Hitachi Semiconductor
Hitachi Semiconductor
 データシート pdf
2SK3389

Switching Regulator/ DC-DC Converter Applications Motor Drive Applications

2SK3389 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK3389 Switching Regulator, DC-DC Converter Applications Motor Drive Applications • • • • Low drain-source ON resistance: RDS (ON) = 3.8 mΩ (typ.) High forward transfer admittance: |Yfs| = 70

Toshiba Semiconductor
Toshiba Semiconductor
 データシート pdf
2SK2292-01S

N-channel MOS-FET

2SK2292-01L,S FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 250V 1,1Ω 4A 20W > Outline Drawing > Applications Switching Regulators UPS DC-DC c

Fuji Electric
Fuji Electric
 データシート pdf
2SK1607

N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK1607 DESCRIPTION ·Drain Current –ID=13A@ TC=25℃ ·Drain Source Voltage- : VDSS=450V(Min) APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching

Inchange Semiconductor
Inchange Semiconductor
 データシート pdf


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