Datasheet 2SK2003-01MR Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	2SK2003-01MR	N-channel MOS-FET 2SK2003-01MR FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 600V 2,4Ω 4A 40W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Pur	Fuji Electric

2SK2003-0 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
2SK2003-01MR	N-channel MOS-FET 2SK2003-01MR FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 600V 2,4Ω 4A 40W > Outline Drawing > Applications Switching Regulators UPS DC-DC co	Fuji Electric
2SK2003-01M	N-Channel MOSFET Transistor INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK2003-01M DESCRIPTION ·Drain Current –ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Fast Switching Speed APPLICATIONS ·Switching regulators ·UPS ·General purpose power amplif	Inchange Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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