INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK1278 DESCRIPTION ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Fast Switching Sp

2SK1278 F-V Series > Features - Include Fast Recovery Diode - High Voltage - Low Driving Power N-channel MOS-FET 500V 1,1Ω 10A 100W > Outline Drawing > Applications - Motor Control - Inverters

2SK3872-01L,S,SJ N-CHANNEL SILICON POWER MOSFET FUJI POWER MOSFET Super FAP-G Series Outline Drawings (mm) 200406 Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters UPS

Ordering number:ENN6228A N-Channel Silicon MOSFET 2SK2627 Ultrahigh-Speed Switching Applications Features · Low ON-resistance. · Low Qg. Package Dimensions unit:mm 2128 [2SK2627] 8.2 7.8 6.2 3 0.4 0.2 0.6 4.2 1.2 8.4 10.0 1.0 2.54 1 2 1.0 2.54 0.3 0.6 5.08 10.0 6.

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK1613 DESCRIPTION ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS=900V(Min) APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching

2SK2398 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2398 DC−DC Converter and Motor Drive Applications Unit: mm l Low drain−source ON resistance : RDS (ON) = 22 mΩ (typ.) l High forward transfer admittance : |Yfs| = 27 S (typ.) l Low leakag

Ordering number : ENN8241 2SK3823 2SK3823 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. • Motor drive, DC / DC converter. • Avalanche resistance guarantee. Specification