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2SK3389 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK3389 Switching Regulator, DC-DC Converter Applications Motor Drive Applications • • • • Low drain-source ON resistance: RDS (ON) = 3.8 mΩ (typ.) High forward transfer admittance: |Yfs| = 70

2SK2292-01L,S FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 250V 1,1Ω 4A 20W > Outline Drawing > Applications Switching Regulators UPS DC-DC c

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK1607 DESCRIPTION ·Drain Current –ID=13A@ TC=25℃ ·Drain Source Voltage- : VDSS=450V(Min) APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching

Ordering number : EN8147A 2SK3820 N-Channel Power MOSFET 100V, 26A, 60mΩ, TO-263-2L http://onsemi.com Features • ON-resistance RDS(on)1=45mΩ(typ.) • Input capacitance Ciss=2150pF (typ.) • 4V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbo

2SK1161, 2SK1162 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS00

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS 2SK1658 N-channel MOSFET V(BR)DSS 30 V RDS(on)MAX   10Ω@4V  15Ω@2.5V   ID 100mA SOT-323 1. GATE 2. SOURCE 3. DRAIN FEATURE z Low on-resistance z Fast switching speed z Low voltage