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2SK105 データシート PDF ( Data ) |
番号 | 部品番号 | 部品説明 | メーカ | |
1 | 2SK105 | N-Channel FET Free Datasheet http://www.Datasheet.jp/ Free Datasheet http://www.Datasheet.jp/ Free Datasheet http://www.Datasheet.jp/ |
![]() NEC |
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2SK データシート - 検索結果 |
部品番号 | 部品説明 | メーカ | |
2SK3389 | Switching Regulator/ DC-DC Converter Applications Motor Drive Applications 2SK3389 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK3389 Switching Regulator, DC-DC Converter Applications Motor Drive Applications • • • • Low drain-source ON resistance: RDS (ON) = 3.8 mΩ (typ.) High forward transfer admittance: |Yfs| = 70 |
![]() Toshiba Semiconductor |
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2SK2292-01S | N-channel MOS-FET 2SK2292-01L,S FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 250V 1,1Ω 4A 20W > Outline Drawing > Applications Switching Regulators UPS DC-DC c |
![]() Fuji Electric |
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2SK1607 | N-Channel MOSFET Transistor INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK1607 DESCRIPTION ·Drain Current –ID=13A@ TC=25℃ ·Drain Source Voltage- : VDSS=450V(Min) APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching |
![]() Inchange Semiconductor |
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2SK3820 | N-Channel Power MOSFET Ordering number : EN8147A 2SK3820 N-Channel Power MOSFET 100V, 26A, 60mΩ, TO-263-2L http://onsemi.com Features • ON-resistance RDS(on)1=45mΩ(typ.) • Input capacitance Ciss=2150pF (typ.) • 4V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbo |
![]() ON Semiconductor |
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2SK1161 | Silicon N Channel MOS FET 2SK1161, 2SK1162 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS00 |
![]() Renesas |
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2SK1658 | N-Channel MOSFET JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS 2SK1658 N-channel MOSFET V(BR)DSS 30 V RDS(on)MAX 10Ω@4V 15Ω@2.5V ID 100mA SOT-323 1. GATE 2. SOURCE 3. DRAIN FEATURE z Low on-resistance z Fast switching speed z Low voltage |
![]() JCET |
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