2SK1045 データシート PDFこの部品の機能は「Transistor」です。 |
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部品番号 |
2SK1045 Transistor WW .100Y.C M.TW WW .100Y.C M.TW WW 00Y.CO .TW WW 00Y.CO .TW W W W T .1 W.1 Y.COM W M. OM W O W C . W C W . Y W .T W .100 .TW 00Y M.T .100 OM W O W C . W W.1 Y.COM W C W Y W WW .100Y. .TW M.T .100 .T 0 ETC |
文字列「 2SK1045 」「 2SK1045 」で始まる検索結果です。 |
部品説明 |
AGR21045EF Transistor Data Sheet AGR21045EF 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21045EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for wideband code division multiple access (W-CDMA TriQuint Semiconductor |
MRF21045LR3 RF Power Field Effect Transistors MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF21045/D The RF MOSFET Line RF Power Field Effect Transistors Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multi Motorola Semiconductors |
MRF21045LSR3 RF Power Field Effect Transistors MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF21045/D The RF MOSFET Line RF Power Field Effect Transistors Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multi Motorola Semiconductors |
MRF5P21045NR1 RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Freescale Semiconductor Technical Data Document Number: MRF5P21045N Rev. 0, 4/2007 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA a Freescale Semiconductor |
MRF5S21045 RF Power Field Effect Transistors Freescale Semiconductor Technical Data Document Number: MRF5S21045 Rev. 1, 7/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suita Freescale Semiconductor |
MRF5S21045MBR1 RF Power Field Effect Transistors Freescale Semiconductor Technical Data Document Number: MRF5S21045 Rev. 1, 7/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suita Freescale Semiconductor |
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