2SJ649 データシート PDFこの部品の機能は「Mos Field Effect Transistor」です。 |
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部品番号 |
2SJ649 MOS FIELD EFFECT TRANSISTOR www.Datasheet.jp DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ649 SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ649 is P-channel MOS Field Effect Transistor designed for solenoid, motor and NEC |
文字列「 2SJ649 」「 2SJ649 」で始まる検索結果です。 |
部品説明 |
2SD2649 NPN Triple Diffused Planar Silicon Transistor Ordering number : ENN6679A 2SD2649 NPN Triple Diffused Planar Silicon Transistor 2SD2649 Color TV Horizontal Deflection Output Applications Features • High speed. • High breakdown voltage(VCBO=1500V). • High reliability(Adoption of HVP process). • Adoption of MBIT proce Sanyo Semicon Device |
2SK2649 N-channel MOS-FET 2SK2649-01R FAP-IIS Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated N-channel MOS-FET 800V 1,5Ω 9A 100W > Outline Drawing > Applications Switching Regulators U Fuji Electric |
2SK2649-01R N-channel MOS-FET 2SK2649-01R FAP-IIS Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated N-channel MOS-FET 800V 1,5Ω 9A 100W > Outline Drawing > Applications Switching Regulators U Fuji Electric |
D2649 NPN Triple Diffused Planar Silicon Transistor Ordering number : ENN6679A 2SD2649 NPN Triple Diffused Planar Silicon Transistor 2SD2649 Color TV Horizontal Deflection Output Applications Features • High speed. • High breakdown voltage(VCBO=1500V). • High reliability(Adoption of HVP process). • Adoption of MBIT proce Sanyo Semicon Device |
GMM2649233EFTG 8Mx64 Bits PC100/PC133 Sdram Unbuffered Dimm Based on 8Mx8 Sdram With Lvttl 8Mx64 bits PC100/PC133 SDRAM Unbuffered DIMM based on 8Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh GMM2649233EFTG Description The GMM2649233EFTG is a 8M x 64bits Synchronous Dynamic RAM MODULE which is assembled 8 pieces of 8M x 8bits Synchronous DRAMs in 54 pin TSOP II package Hynix Semiconductor |
GMM2649233ETG 8Mx64 Bits PC100/PC133 Sdram Unbuffered Dimm Based on 8Mx8 Sdram With Lvttl 8Mx64 bits PC100/PC133 SDRAM Unbuffered DIMM based on 8Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh GMM2649233ETG Description The GMM2649233ETG is a 8M x 64bits Synchronous Dynamic RAM MODULE which is assembled 8 pieces of 8M x 8bits Synchronous DRAMs in 54 pin TSOP II package an Hynix Semiconductor |
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