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2SJ649 データシート PDF

この部品の機能は「Mos Field Effect Transistor」です。


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部品番号
2SJ649

MOS FIELD EFFECT TRANSISTOR


www.Datasheet.jp DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ649 SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ649 is P-channel MOS Field Effect Transistor designed for solenoid, motor and


NEC
NEC

データシート pdf



文字列「 2SJ649 」「 2SJ649 」で始まる検索結果です。

部品説明

2SD2649

NPN Triple Diffused Planar Silicon Transistor

Ordering number : ENN6679A 2SD2649 NPN Triple Diffused Planar Silicon Transistor 2SD2649 Color TV Horizontal Deflection Output Applications Features • High speed. • High breakdown voltage(VCBO=1500V). • High reliability(Adoption of HVP process). • Adoption of MBIT proce

Sanyo Semicon Device
Sanyo Semicon Device

 データシート pdf


2SK2649

N-channel MOS-FET

2SK2649-01R FAP-IIS Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated N-channel MOS-FET 800V 1,5Ω 9A 100W > Outline Drawing > Applications Switching Regulators U

Fuji Electric
Fuji Electric

 データシート pdf


2SK2649-01R

N-channel MOS-FET

2SK2649-01R FAP-IIS Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated N-channel MOS-FET 800V 1,5Ω 9A 100W > Outline Drawing > Applications Switching Regulators U

Fuji Electric
Fuji Electric

 データシート pdf


D2649

NPN Triple Diffused Planar Silicon Transistor

Ordering number : ENN6679A 2SD2649 NPN Triple Diffused Planar Silicon Transistor 2SD2649 Color TV Horizontal Deflection Output Applications Features • High speed. • High breakdown voltage(VCBO=1500V). • High reliability(Adoption of HVP process). • Adoption of MBIT proce

Sanyo Semicon Device
Sanyo Semicon Device

 データシート pdf


GMM2649233EFTG

8Mx64 Bits PC100/PC133 Sdram Unbuffered Dimm Based on 8Mx8 Sdram With Lvttl

8Mx64 bits PC100/PC133 SDRAM Unbuffered DIMM based on 8Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh GMM2649233EFTG Description The GMM2649233EFTG is a 8M x 64bits Synchronous Dynamic RAM MODULE which is assembled 8 pieces of 8M x 8bits Synchronous DRAMs in 54 pin TSOP II package

Hynix Semiconductor
Hynix Semiconductor

 データシート pdf


GMM2649233ETG

8Mx64 Bits PC100/PC133 Sdram Unbuffered Dimm Based on 8Mx8 Sdram With Lvttl

8Mx64 bits PC100/PC133 SDRAM Unbuffered DIMM based on 8Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh GMM2649233ETG Description The GMM2649233ETG is a 8M x 64bits Synchronous Dynamic RAM MODULE which is assembled 8 pieces of 8M x 8bits Synchronous DRAMs in 54 pin TSOP II package an

Hynix Semiconductor
Hynix Semiconductor

 データシート pdf

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