| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | 2SJ635 | P-Channel Silicon MOSFET General-Purpose Switching Device Applications Ordering number : ENN8277 2SJ635 P-Channel Silicon MOSFET 2SJ635 Features • • • • General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 4V drive. DC / DC Converter. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current ( |
 Sanyo Semicon Device |
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Recommended search results related to 2SJ635 |
| Part No | Description ( Function) | Manufacturers | |
| 2SD2635 | 120V / 2A Driver Applications Ordering number:ENN6449 NPN Epitaxial Planar Silicon Darlington Transistor 2SD2635 120V / 2A Driver Applications Applications · Motor drivers, hammer drivers, and relay drivers. Package Dimensions unit:mm 2064A [2SD2635] 2.5 1.45 6.9 1.0 Features · Darlington connection · |
Sanyo Semicon Device |
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| 2SJ600 | SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ600 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SJ600 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. ORDERING INFORMATION PART NUMBER 2SJ600 PACKAGE TO-251 TO-25 |
 NEC |
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| 2SJ600 | MOS Field Effect Transistor SMD Type MOS Field Effect Transistor 2SJ600 Features Low on-resistance RDS(on)1 = 50 m RDS(on)2 = 79m MAX. (VGS =-10 V, ID = -13 A) MAX. (VGS = -4.0 V, ID =-13 A) +0.15 5.55-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 IC MOSFET TO-252 +0.15 1.50-0.15 +0.1 2.30-0.1 +0.8 0.50-0.7 Unit: m |
 Kexin |
|
| 2SJ601 | SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ601 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SJ601 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. ORDERING INFORMATION PART NUMBER 2SJ601 2SJ601-Z PACKAGE TO- |
NEC |
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| 2SJ601 | MOS Field Effect Transistor SMD Type MOS Field Effect Transistor 2SJ601 TO-252 +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 +0.1 2.30-0.1 +0.8 0.50-0.7 IC MOSFET Features Low on-resistance RDS(on)1 = 31 m RDS(on)2 = 46m MAX. (VGS =-10 V, ID = -18 A) Unit: mm +0.2 9.70-0.2 +0.1 0.80-0.1 +0.28 1.50-0.1 |
Kexin |
|
List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
|
| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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