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2SJ630 PDF Datasheet

The 2SJ630 is General-purpose Switching DevICe ApplICations. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 2SJ630
General-Purpose Switching Device Applications

Ordering number : ENA0489 2SJ630 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 2SJ630 Features • • • General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Dr

Sanyo Semicon Device
Sanyo Semicon Device
pdf

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14HM2630   2 Phase Hybrid Stepper Motor

MotionKing (China) Motor Industry Co., Ltd. HB Stepper Motor Catalog 2 Phase Hybrid Stepper Motor 14HM series-Size 35mm(0.9 degree) Wiring Diagram: UNI-POLAR(6 LEADS) BI-POLAR(4LEADS) Electrical Specifications: Series Model Step Motor Rated Phase Phase Angle Length Cur

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14HY2630   2 Phase Hybrid Stepper Motor

MotionKing (China) Motor Industry Co., Ltd. HB Stepper Motor Catalog 2 Phase Hybrid Stepper Motor 14HY series-Size 35mm(1.8 degree) Wiring Diagram: UNI-POLAR(6 LEADS) BI-POLAR(4LEADS) Electrical Specifications: Series Model Step Angle (deg) Motor Length (mm) Rated Phas

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2SC2630   NPN EPITAXIAL PLANAR TYPE(RF POWER TRANSISTOR)

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2SJ600   SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ600 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SJ600 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. ORDERING INFORMATION PART NUMBER 2SJ600 PACKAGE TO-251 TO-25

NEC
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2SJ600   MOS Field Effect Transistor

SMD Type MOS Field Effect Transistor 2SJ600 Features Low on-resistance RDS(on)1 = 50 m RDS(on)2 = 79m MAX. (VGS =-10 V, ID = -13 A) MAX. (VGS = -4.0 V, ID =-13 A) +0.15 5.55-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 IC MOSFET TO-252 +0.15 1.50-0.15 +0.1 2.30-0.1 +0.8 0.50-0.7 Unit: m

Kexin
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