2SJ607 データシート PDFこの部品の機能は「Mos Field Effect Transistor」です。 |
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部品番号 |
2SJ607 MOS Field Effect Transistor SMD Type MOS Field Effect Transistor 2SJ607 TO-263 +0.1 1.27-0.1 MOSFET Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Features Low on-resistance RDS(on)1 =11 m RDS(on)2 = 16 m MAX. (VGS =-10 V, ID = -42A) Kexin |
2SJ607 MOS FIELD EFFECT TRANSISTOR DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ607 SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ607 is P-channel MOS Field Effect Transistor designed for high current switching applications. OR NEC |
文字列「 2SJ607 」「 2SJ607 」で始まる検索結果です。 |
部品説明 |
24HS2607N Hybrid Stepper Motors HYBRID STEPPING MOTORS 0.9˚ 2-PHASE 1.8˚ 3.6˚ 24HS SERIES 1.8° Key Features I High Torque I High Accuracy I Smooth Movement General Specifications Bi-polar Model Number Resistance Inductance Rated per Phase per Phase Current ohm mH A 24HS1402N 0.73 1.6 2.8 24HS1 ETC |
2KG026075JL Switching diode chip 2KG026075JL 2KG026075JL开关二极管芯片 描述 Ø 2KG026075JL是利用硅外延工艺生产的用于 塑封的开关二极管芯片; Ø 利用该芯片封装的典型成品有1N4148(高速 开关二极管); Ø 有多种厚度可选择,正面电极材料为铝,背� Silan Microelectronics |
2KG026075YQ SWITCHING DIODE CHIPS 2KG026075YQ 2KG026075YQ SWITCHING DIODE CHIPS DESCRIPTION Ø 2KG026075YQ is a high speed switching diode chip fabricated in planar technology. Ø Ø This chip can be encapsulated as 1N4148 switching diode. When the chip is selected glass package, the chip thickness is 100µm, and Silan Microelectronics |
2SD2607 For Power amplification w w a D . w S a t e e h U 4 t m o .c w w w .D t a S a e h U 4 t e m o .c w w w .D a t a e h S 4 t e U . m o c ROHM Semiconductor |
2SK2607 Silicon N Channel MOS Type Field Effect Transistor 2SK2607 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2607 Chopper Regulator, DC−DC Converter and Moter Drive Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 1.0 Ω (typ.) z High forward transfer admittance : |Yfs|= 7.0 S Toshiba Semiconductor |
ACE2607B P-Channel Enhancement Mode Field Effect Transistor ACE2607B P-Channel Enhancement Mode Field Effect Transistor Description ACE2607B is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits for low voltage application such as portable equip ACE Technology |
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