|
|
Datasheet 2SJ586 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | 2SJ586 | Silicon P Channel MOS FET High Speed Switching 2SJ586
Silicon P Channel MOS FET High Speed Switching
ADE-208-771A (Z) 2nd.Edition. June 1999 Features
• Low on-resistance R DS = 4.1 Ω typ. (VGS = -4 V , I D = -50 mA) R DS = 6.0 Ω typ. (VGS = -2.5 V , ID = -50 mA) • 2.5 V gate drive device. • Small package (CMPAK)
Outline
CMPAK
3
1 2 |
Hitachi Semiconductor |
2SJ Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
2SJ72 | Silicon P-Channel Transistor |
Toshiba Semiconductor |
|
2SJ115 | SILICON P-CHANNEL MOS FET |
Toshiba |
|
2SJ6812 | NPN Triple Diffused Planar Silicon Transistor |
Fairchild Semiconductor |
Esta página es del resultado de búsqueda del 2SJ586. Si pulsa el resultado de búsqueda de 2SJ586 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |