|
|
Datasheet 2SJ554 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | 2SJ554 | P-Channel MOSFET ( Transistor ) 2SJ554
Silicon P Channel MOS FET
Description
High speed power switching
Features
• Low on-resistance RDS (on) = 0.028 Ω typ.
• Low drive current. • 4 V gate drive devices. • High speed switching.
Outline
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
1 2 3
G
D S
REJ03G0901-0 |
 Renesas |
 |
| 1 | 2SJ554 | Silicon P Channel MOS FET High Speed Power Switching 2SJ554
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-628B (Z) 3rd. Edition Jun 1998 Features
• Low on-resistance R DS(on) = 0.028 Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.
Outline
TO–3P
D
G
1
S
2
3
2SJ554
Absolute Maximum Ratings |
 Hitachi Semiconductor |
|
| Esta página es del resultado de búsqueda del 2SJ554. Si pulsa el resultado de búsqueda de 2SJ554 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Enlace url :
[1]
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |