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Datasheet 2SJ549S Equivalent ( PDF )

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1 2SJ549S   Silicon P Channel MOS FET High Speed Power Switching

2SJ549(L),2SJ549(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-644A (Z) 2nd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.11 Ω typ. • Low drive current • 4 V gete drive devices • High speed switching Outline LDPAK 4 4 D 1 1 2 3 G 2 3 1. Gate 2. Drain
 Hitachi Semiconductor
Hitachi Semiconductor		 datasheet 2SJ549S pdf

2SJ5 Datasheet ( Hoja de datos ) - resultados coincidentes

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2SJ50

LOW FREQUENCY POWER AMPLIFIER

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Hitachi Semiconductor
Hitachi Semiconductor		 datasheet pdf - Hitachi Semiconductor
2SJ580

Ultrahigh-Speed Switching Applications

Ordering number : ENN6669 2SJ580 P-Channel Silicon MOSFET 2SJ580 Ultrahigh-Speed Switching Applications Features • • • Package Dimensions unit : mm 2062A [2SJ580] 4.5 1.6 1.5 Low ON-resistanse. Ultrahigh-speed switching. 4V drive. 0.5 3 1.5 2 3.0 1 1.0 0.4 2.5 4
 Sanyo Semicon Device
Sanyo Semicon Device		 datasheet pdf - Sanyo Semicon Device
2SJ530

Silicon P Channel MOS FET High Speed Power Switching

2SJ530(L),2SJ530(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-655B (Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.08 Ω typ. • 4V gate drive devices. • High speed switching. Outline DPAK–2 4 D 4 1 2 G 3 1 2 S 3 1. Gate 2.
Hitachi Semiconductor
Hitachi Semiconductor		 datasheet pdf - Hitachi Semiconductor


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SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


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