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Datasheet 2SJ506 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | 2SJ506 | Silicon P Channel MOS FET High Speed Power Switching 2SJ506(L), 2SJ506(S)
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-548 Target Specification 1st. Edition Features
• Low on-resistance R DS(on) = 0.065 Ω typ. (at V GS = –10V, ID = –5A) • Low drive current • High speed switching • 4V gate drive devices.
Outline
DPAK–2 |
 Hitachi Semiconductor |
 |
| 2 | 2SJ506L | Silicon P Channel MOS FET High Speed Power Switching 2SJ506(L), 2SJ506(S)
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-548 Target Specification 1st. Edition Features
• Low on-resistance R DS(on) = 0.065 Ω typ. (at V GS = –10V, ID = –5A) • Low drive current • High speed switching • 4V gate drive devices.
Outline
DPAK–2 |
Hitachi Semiconductor |
|
| 1 | 2SJ506S | Silicon P Channel MOS FET High Speed Power Switching 2SJ506(L), 2SJ506(S)
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-548 Target Specification 1st. Edition Features
• Low on-resistance R DS(on) = 0.065 Ω typ. (at V GS = –10V, ID = –5A) • Low drive current • High speed switching • 4V gate drive devices.
Outline
DPAK–2 |
Hitachi Semiconductor |
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