2SJ179 データシート PDFこの部品の機能は「P-channel Mos Fet For High Speed Switching」です。 |
検索結果を表示する |
部品番号 |
2SJ179 P-CHANNEL MOS FET FOR HIGH SPEED SWITCHING NEC |
文字列「 2SJ179 」「 2SJ179 」で始まる検索結果です。 |
部品説明 |
2SA2179 PNP Epitaxial Planar Silicon Transistor Ordering number : ENA0199 2SA2179 2SA2179 Applications • PNP Epitaxial Planar Silicon Transistor 50V / 13A High-Speed Switching Applications High-speed switching applications (switching regulators, drive circuit). Features • • • • Adoption of Sanyo Semicon Device |
2SD2179 Silicon NPN epitaxial planer type(For low-frequency output amplification) Transistor 2SD2179 Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SB1446 6.9±0.1 0.15 Unit: mm 1.05 2.5±0.1 ±0.05 (1.45) 0.8 0.5 4.5±0.1 0.45–0.05 2.5±0.1 0.7 4.0 s Features q q q 0.65 max. 1.0 1.0 Low collector to emitte Panasonic Semiconductor |
2SD2179 Silicon PNP epitaxial planer type(For low-frequency output amplification) Transistor 2SD2179 Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SB1446 6.9±0.1 0.15 Unit: mm 1.05 2.5±0.1 ±0.05 (1.45) 0.8 0.5 4.5±0.1 0.45–0.05 2.5±0.1 0.7 4.0 s Features q q q 0.65 max. 1.0 1.0 Low collector to emitte Panasonic Semiconductor |
2SK2179 VX-2 Series Power MOSFET(500V 3A) SHINDENGEN VX-2 Series Power MOSFET N-Channel Enhancement type 2SK2179 (F3E50VX2) 500V 3A FEATURES •œ Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. •œ The static Rds(on) is small. •œ The switching time is fast. APPLICATION •œ S Shindengen Electric Mfg.Co.Ltd |
CG2179M2 RF SWITCH RF SWITCH CG2179M2 L, SE-bnatenrda SMhiodrdt DleocPuomwenetr/TSitlPeDNTamSewHietrceh DESCRIPTION The CG2179M2 is a pHEMT GaAs SPDT (Single Pole Double Throw) switch. This device can operate from 0.05 GHz to 3.0GHz, having low insertion loss and high isolation. PACKAGE 6 CEL |
CHM2179A W-band Mixer CHM2179a W-band Mixer GaAs Monolithic Microwave IC Description The CHM2179a is a balanced Schottky diode mixer based on a six quarter wave ring structure. This circuit is manufactured with the BES-MMIC process: 1 µm Schottky diode device, air bridges, via holes through the subs United Monolithic Semiconductors |
当社のサイトでは、半導体やセンサーからモーター、電源に至るまで、さまざまな製品のデータシートを簡単に検索してダウンロードできる集中型プラットフォームを提供しています。 |