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Datasheet 2SD999 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | 2SD999 | NPN EPITAXIAL SILICON TRANSISTOR RoHS 2SD999
2SD999 TRANSISTOR (NPN)
FEATURES Power dissipation
DPCM: 0.5 W (Tamb=25℃)
TCollector current
ICM: 1 A
.,LCollector-base voltage
V(BR)CBO:
30 V
Operating and storage junction temperature range
OTJ, Tstg: -55℃ to +150℃
SOT-89
1. BASE
2. COLLECTOR 3. EMITTER
1 2 3
CELEC |
 WEJ |
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| 3 | 2SD999 | NPN Silicon Epitaxial Transistor Transistors SMD Type
Transistors
NPN Silicon Epitaxial Transistor 2SD999
Features
World standard miniature package:SOT-89. Low collector saturation voltage. Excellent dc current gain linearity.
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage |
 Kexin |
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| 2 | 2SD999 | NPN Transistor 2SD999
TRANSISTOR (NPN)
FEATURES z Low Collector-Emitter Saturation Voltage z Mini Power Type Package z Excellent DC Current Gain Linearity
SOT-89-3L
1. BASE 2. COLLECTOR 3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg
Parameter Collector-B |
 Jin Yu Semiconductor |
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| 1 | 2SD999 | NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD |
 NEC |
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