|
|
Datasheet 2SD966 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | 2SD966 | Silicon NPN epitaxial planer type(For low-frequency power amplification) Transistor
2SD966
Silicon NPN epitaxial planer type
For low-frequency power amplification For stroboscope
5.9± 0.2
Unit: mm
4.9± 0.2
q q
2.54± 0.15
(Ta=25˚C)
Ratings 40 20 7 8 5 1 150 –55 ~ +150 Unit V V V A A W ˚C ˚C
0.45–0.1 1.27
+0.2
Parameter Collector to base voltage Collector t |
 Panasonic Semiconductor |
 |
| 2 | 2SD966 | Silicon NPN epitaxial planar type www.DataSheet4U.net
Transistors
2SD0966 (2SD966)
Silicon NPN epitaxial planar type
For low-frequency amplification For stroboscope ■ Features
• Low collector-emitter saturation voltage VCE(sat) • Satisfactory operation performances at high efficiency with the lowvoltage power supply.
0.7±0. |
Panasonic Semiconductor |
|
| 1 | 2SD966 | NPN Silicon Epitaxial Planar Transistor ST 2SD966
NPN Silicon Epitaxial Planar Transistor for low-frequency power amplification and stroboscope. The transistor is subdivided into three groups P, Q and R, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
TO-92 Plas |
 SEMTECH |
|
| Esta página es del resultado de búsqueda del 2SD966. Si pulsa el resultado de búsqueda de 2SD966 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Enlace url :
[1]
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |