Datasheet 2SD2177A Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	2SD2177A	Silicon NPN epitaxial planer type(For low-frequency output amplification) Transistor 2SD2177A Silicon NPN epitaxial planer type For low-frequency output amplification Unit: mm 6.9±0.1 0.15 1.05 2.5±0.1 ±0.05 (1.45) 0.8 0.5 4.5±0.1 0.7 4.0 s Features q q Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. 0.65 max. 1.0	Panasonic Semiconductor

2SD21 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
2SD2144	High-current Gain MediumPower Transistor (20V/ 0.5A) Transistors High-current Gain Medium Power Transistor (20V, 0.5A) 2SD2114K / 2SD2144S FFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO = 12V (Min.) 3) Low VCE(sat). VCE(sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) FStructure Epitaxial plana	ROHM Semiconductor
2SD218	(2SD217 / 2SD218) NPN SILICON EPITAXIAL MESA TRANSISTOR	ETC
2SD2155	NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS)	Toshiba Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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