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Datasheet 2SD2136 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | 2SD2136 | NPN Plastic Encapsulated Transistor Elektronische Bauelemente
2SD2136
3A , 60V NPN Plastic Encapsulated Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
Low frequency power amplifier Low Collector-Emitter Saturation Voltage VCE(sat) High Forward Current Transfer Ratio hFE Which has Satis |
 SeCoS |
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| 3 | 2SD2136 | NPN Transistor RoHS 2SD2136
2SD2136 TRANSISTOR (NPN)
DFEATURES Power dissipation
TPCM:
1.25 W (Tamb=25℃)
.,LCollector current
ICM: Collector-base voltage
3A
OV(BR)CBO:
60 V
Operating and storage junction temperature range
CTJ, Tstg: -55℃ to +150℃
TO-126
1. EMITTER
2. COLLECTOR
3. BASE
123
IC |
 WEJ |
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| 2 | 2SD2136 | Silicon NPN triple diffusion planar type Power Transistors
2SD2136
Silicon NPN triple diffusion planar type
For power amplification Complementary to 2SB1416
7.5±0.2
Unit: mm
4.5±0.2
16.0±1.0
2.5±0.1
• High forward current transfer ratio hFE which has satisfactory linearity. • Low collector-emitter saturation voltage VCE(sat) |
 Panasonic Semiconductor |
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| 1 | 2SD2136 | NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD
2SD2136
NPN SILICON TRANSISTOR
POWER TRANSISTOR
DESCRIPTION
The UTC 2SD2136 is designed for power application.
FEATURES
* High forward current transfer ratio hFE which has satisfactory linearity. * Low collector to emitter saturation voltage VCE(SAT). * All |
 Unisonic Technologies |
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